Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

• Tomi Roinila,
• Xiao Yu,
• Jarmo Verho,
• Tie Li,
• Pasi Kallio,
• Matti Vilkko,
• Anran Gao and
• Yuelin Wang

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

• methods is verified by experimental measurements from an n-type SiNW FET. Keywords: admittance spectroscopy; excitation design; frequency characterization; frequency response; silicon nanowire; Introduction Recent development in sensing biochemical molecules has been rapid. Among many sensing